MadSci Network: Physics |
Dear Vipul,
So we meet again! I don't know if you remember, but I was the one who supplied you with the confinement factor approximations two months ago.
This time, I want to reference you to some excellent source after I clarify what we are discussing.
The differential gain is an intrinsic property of the material in the active layer and is independent of the laser structure and measurement technique. It's defined as the differential of the optical material gain to the increment of the injected carrier density.
Try these URLs for insightful articles on approximating this theoretically and measuring it practically...
"Differential Gain Analysis of InGaAs/InGaAsP/InP Multiquantum Well
Lasers with 1.55 micron Emission Wavelength", M.T. Furtado, eta. al,
Brazilian Journal of Physics (ISSN 0103-9733).
http://www.scielo.br/scielo.php?script=sci_arttext&pid=S0103-97331997000400005&lng=en&nrm=iso
"Laser Diodes, Chapter 4.10"
http://ece-www.colorado.edu/~bart/book/book/chapter4/pdf/ch4_10.pdf
Also, these references develoop the tpic a little more deeply...
(1)Peter S. Zory, Quantum Well Lasers ,Academic Press Inc, 1993. (2) L. A. Coldren & S. W. Corzine, Diode Lasers and Photonic Integrated Circuits , John Wiley & Sons, Inc, 1995. (3) Sandra R.Selmic, Multiple Quantum Well Semiconductor Lasers Emitting at Wavelength of 1310 nm and 1550 nm , Copyright by Sandra R. Selmic,2002. (4)Tso-Min Chou, Theory and Design Application of Strained separate- Confinement Heterostructure Quantum Well Lasers, Copyright by Tso-Min Chou, 1995.Hope these help!
---* Dr. Ken Beck
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