|MadSci Network: Engineering|
In the Semiconductor field, Ion implanters use ions as the dopant source to be implanted in silicon. Common knowledge is the Ion is an atom which has gained or lost and electron thus making it a positive or negative ion. When this Ion is implanted into silicon what is the interaction with the valence electrons of the ion and silicon that make the implanted region into an n or p type region (one with more electrons or holes)? It would be real helpful if you could give an example of an implant with the boron ion as well as the arsenic ion with the subject of charge carriers so I can get a better feel for what is going on once these ions are annealed. Thanks
Re: How do Ion's implanted into silicon change the area into dopant sites?
Try the links in the MadSci Library for more information on Engineering.